| PART |
Description |
Maker |
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| CS5464-IS |
Three-channel, Single-phase Power/Energy IC
|
Cirrus Logic, Inc.
|
| IRF440R IRFP442R IRFP443R IRFP441R |
Avalanche Energy Rated N-Channel Power MOSFETs
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
|
| IRF533 |
(IRF530 - IRF533) N-Channel Power MOSFETs Avalanche Energy Rated
|
Harris Corporation
|
| IRF5M4905 IRF5M4B905 |
Avalanche Energy Ratings
THRU-HOLE (TO-254AA) 55V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.03ohm, Id=-35A*)
|
International Rectifier
|
| IRFP360 IRFP362 |
Avalanche-Energy-Rated N-Channel Power MOSFETs
Avalanche-Energy-Rated N-Channel Power MOSFETs
|
New Jersey Semi-Conduct...
|
| IRF5NJ540 |
Avalanche Energy Ratings
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.052ohm, Id=22A*)
SURFACE MOUNT (SMD-0.5)100V, N-CHANNEL
100V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package
|
IRF[International Rectifier]
|
| PHW9N60E PHB9N60E |
PowerMOS transistors Avalanche energy rated
GT 10C 10#16 SKT PLUG RTANG 9 A, 600 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| MTH8N50E |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
| EM4-DINAV93DXR EM4-DINAV13ADR EM4-DINAV13AOR EM4-D |
Energy Management Energy Meter with plug-in Output Modules
|
http://
List of Unclassifed Manufacturers
ETC[ETC]
List of Unclassifed Man...
|
| MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 500 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
