| PART |
Description |
Maker |
| SKW30N60 |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT) 快速的S - IGBT的不扩散核武器条约与软，恢复快反平行快恢复二极管（不扩散技术中的快速第S - IGBT技术）
|
SIEMENS AG
|
| Q67040-S4340 SKP06N60 Q67040-S4230 Q67040-S4231 SK |
Fast S-IGBT in NPT-Technology with An...
IGBTs & DuoPacks - 6A 600V TO263AB SMD IGBT Diode
IGBTs & DuoPacks - 6A 600V TO220-3-31 (Fullpack) IGBT Diode
Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
INFINEON[Infineon Technologies AG]
|
| SIGC07T60SNC |
IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient
|
Infineon Technologies AG
|
| SGW10N60 SGB10N60 |
Fast S-igbt in Npt-technology
|
Infineon Technologies Corporation
|
| SGD02N120 SGP02N120 SGB02N120 SGI02N120 |
Fast S-IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| K25N120 |
Fast IGBT in NPT-technology
|
Infineon Technologies
|
| SKW07N12008 |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
Infineon Technologies AG
|
| SKW25N12008 |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
Infineon Technologies AG
|
| SGB30N6009 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP02N12007 SGP02N120 SGD02N120 SGI02N120 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB10N60A07 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB04N60 SGB04N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
