PART |
Description |
Maker |
GTVA221701FA |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
PTFA181001F |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies
|
PTFA181001GL |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies
|
PTFA142401EL |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies
|
PTF140451E PTF140451F |
Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1450 - 1550 MHz
|
Infineon Technologies AG
|
PTFA210701E PTFA210701F |
Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
PTFA192001F PTFA192001E |
Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz
|
Infineon Technologies AG
|
PTFA241301E PTFA241301F PTFA241301FV1 |
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420-2480 MHz Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 ?2480 MHz
|
Infineon Technologies AG Infineon Technologies A...
|
PTVA084007NF |
Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ?805 MHz
|
Cree, Inc
|
PTVA084007NF |
Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ?805 MHz
|
Infineon Technologies A...
|
PTFA082201E09 PTFA082201F |
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 ??894 MHz Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 ?894 MHz
|
Infineon Technologies AG
|
PTFA211801E PTFA211801E11 |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz
|
Infineon Technologies AG
|