| PART |
Description |
Maker |
| 557T186XM 557S186XM |
Composite D-Subminiature EMI/RFI Banding Split Backshell
|
Glenair, Inc.
|
| SVC388 |
Hyper-Abrupt Junction Type Silicon Composite Varactor AM Low Voltage Electronic Tuning Applications
|
Sanyo Semicon Device
|
| XN1C301 XN0C301 |
Composite Device - Composite Transistors
Silicon PNP epitaxial planer transistor (Tr1)
|
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| XN01114 |
Composite Device - Composite Transistors
From old datasheet system
|
panasonic
|
| XN04116 XN04116XN4116 |
Composite Device - Composite Transistors
From old datasheet system
|
panasonic
|
| XP05501 |
Composite Device - Composite Transistors 复合设备-复合晶体
|
Honeywell International, Inc.
Panasonic
|
| XN6214 |
Composite Device - Composite Transistors 复合设备-复合晶体
|
Panasonic, Corp.
|
| XN0111M |
Composite Device - Composite Transistors
From old datasheet system
|
panasonic
|
| XN0A312 XN1A312 |
Composite Device - Composite Transistors
From old datasheet system
|
Matsshita / Panasonic
|
| XP0111F |
Composite Device - Composite Transistors 复合设备-复合晶体
|
IRC Advanced Film
|
| XN04312 XN04312XN4312 XN4312 |
From old datasheet system
Composite Device - Composite Transistors
|
panasonic
|
