PART |
Description |
Maker |
IPP35CN10NG IPP35CN10NG10 IPD35CN10NG IPB35CN10NG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
BSC052N03S |
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
IPP16CN10LG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPP04N03LBG IPP04N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPP13N03LBG IPP13N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPF09N03LBG |
OptiMOS2 Power-Transistor 的OptiMOS2功率晶体
|
Infineon Technologies AG
|
IPU10N03LA Q67042-S4238 IPD10N03LA IPS10N03LA IPF1 |
OptiMOS®2 - Power packages OptiMOS2 Power-Transistor OptiMOS2功率晶体 30 A, 25 V, 0.0104 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
|
INFINEON[Infineon Technologies AG]
|
BSO104N03S |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 9.7mOhm, 13A, LL OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
BSS306N |
OptiMOS2 Small-Signal-Transistor Avalanche rated Qualified according to AEC Q101
|
TY Semiconductor Co., Ltd
|
BSB019N03LXG |
OptiMOS2 Power-MOSFET
|
Infineon Technologies AG
|