| PART |
Description |
Maker |
| H15R1203 |
Reverse conducting IGBT
|
Infineon Technologies
|
| IHW40N135R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| IHW40N120R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| IHW30N120R2 |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IKW40N65WR5-16 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| 5SHX19L6010 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| 5SHX06F6010 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| 5SHX03D6004 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| IXRH40N120 |
IGBT with Reverse Blocking capability
|
IXYS Corporation
|
| U2102BNBSP U2102B |
IGBT/FET control timer for advanced dimmer, motion sensor, reverse phase control applications
From old datasheet system
|
Atmel Corp
|
