PART |
Description |
Maker |
D2212 D2212UK D2002 D2005 |
METAL GATE RF SILICON FET Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-1GHz,单端)
|
SemeLAB SEME-LAB[Seme LAB]
|
D2282UK |
METAL GATE RF SILICON FET Gold Metallised Multi-Purpose Silicon DMOS RF FET(750W-6V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应750W-6V-1GHz,单端)
|
SemeLAB SEME-LAB[Seme LAB]
|
D2002UK |
METAL GATE RF SILICON FET Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-1GHz,单端)
|
SemeLAB Seme LAB
|
D2053UK |
METAL GATE RF SILICON FET Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应5W-28V-1GHz,推拉)
|
SemeLAB SEME-LAB[Seme LAB]
|
D2218UK |
CAT6 SOL PC PVC WHI 50FT PVC SOLID PATCH CORD UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,单端) METAL GATE RF SILICON FET
|
TT electronics Semelab, Ltd. TT electronics Semelab Limited Semelab(Magnatec) Seme LAB
|
CVCSO-914-1000 |
Ultra-Low Phase Noise 1GHz SAW VCSO Ultra-Low Phase Noise 1GHz SAW VCSO
|
Crystek Corporation
|
ADG918BCP ADG919BCP ADG919 ADG918 ADG918BRM ADG919 |
Wideband, 43dB Isolation 1GHz, CMOS 1.65 V to 2.75V, 2:1 Mux/SPDT Switches 宽带,四三分贝隔GHz时的CMOS 1.65 V.75V的,2:1复用/ SPDT开 Wideband 43dB Isolation 1GHz CMOS 1.65 V to 2.75V 2:1 Mux/SPDT Switches Wideband/ 43dB Isolation 1GHz/ CMOS 1.65 V to 2.75V/ 2:1 Mux/SPDT Switches Wideband, 43 dB Isolation @ 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches
|
Analog Devices, Inc. AD[Analog Devices]
|
KH104 |
DC to 1.1GHz Linear Amplifier
|
FAIRCHILD[Fairchild Semiconductor]
|
KH104 KH104AI |
DC to 1.1GHz Linear Amplifier
|
Cadeka Microcircuits LLC.
|
TC0337A |
SAW Resonator 1GHz SMD 3.8X3.8 mm
|
TAI-SAW TECHNOLOGY CO., LTD.
|
MC12022A MC12022B MC12022BP MC12022AD MC12022AP MC |
1.1GHz Dual Modulus Prescaler
|
MOTOROLA[Motorola, Inc]
|