PART |
Description |
Maker |
EIA1415B-8P |
14.9-15.1GHz, 8W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
PE4246 |
Absorbtive SPST ;Operating Frequency (MHz) = DC - 5000 ;; P1dB (dBm) = 33 ;; Insertion Loss (dB, 1GHz) = 0.80 ;; ISOlation (dB, 1GHz) = 55 ;6L MLPM
|
PEREQRINE
|
D2231UK D2229UK D2230 D2230UK D2231 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端) METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
D2021UK D2021 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端) METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
D2213UK D2213 |
METAL GATE RF SILICON FET Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,推拉)
|
SEME-LAB[Seme LAB]
|
SY89834U SY89834UMI SY89834UMITR |
2.5V/3.3V TWO INPUT , 1GHz LVTTL/CMOS-TO-LVPECL 1:4 FANOUT BUFFER/TRANSLATOR 2.5V/3.3V的两个INPUT1GHz的LVTTL / CMOS电到的LVPECL 1:4扇出缓冲翻译 2.5V/3.3V TWO INPUT 1GHz LVTTL/CMOS-TO-LVPECL 1:4 FANOUT BUFFER/TRANSLATOR
|
Micrel Semiconductor, Inc. MICREL[Micrel Semiconductor]
|
KB8825 |
1.1GHZ DUAL PLL
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
ISL5944207 |
1GHz, 4 x 1 Multiplexing Amplifier
|
Intersil Corporation
|
MGP20N40CL |
CAP 0.1UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 SMARTDISCRETES Internally Clamped / N-Channel IGBT SMARTDISCRETES Internally Clamped, N-Channel IGBT
|
Motorola, Inc. MOTOROLA[Motorola, Inc]
|
TC0337A |
SAW Resonator 1GHz SMD 3.8X3.8 mm
|
TAI-SAW TECHNOLOGY CO., LTD.
|
BC2102 |
Sub-1GHz OOK/FSK Transmitter
|
Holtek Semiconductor In...
|