PART |
Description |
Maker |
MGW12N120 |
Insulated Gate Bipolar Transistor N-Channel Insulated Gate Bipolar Transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
|
ONSEMI[ON Semiconductor]
|
CT90AM-18 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V INSULATED GATE BIPOLAR TRANSISTOR
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGY25N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGW20N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
IRG4PC30FDPBF IRG4PC30FDPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack 1GBT
|
International Rectifier
|
CM400HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules HIGH POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
CM1200HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
2PG303 |
Insulated Gate Bipolar Transistor
|
Panasonic
|
IRG4PF50W |
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|