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M12S16161A0707 - 512K x 16Bit x 2Banks Synchronous DRAM

M12S16161A0707_4895098.PDF Datasheet


 Full text search : 512K x 16Bit x 2Banks Synchronous DRAM


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M52S16161A-10BG M52S16161A-10TG 512K x 16Bit x 2Banks Synchronous DRAM
Elite Semiconductor Memory Technology Inc.
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M12S16161A1 M12S16161A-7BIG M12S16161A-7TIG M12S16 512K x 16Bit x 2Banks Synchronous DRAM
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325-5M-15 305-5M-15 1595-5M-15 575-5M-15 480-8M-20 RIEMEN SYNCHRON HTD L 325MM B 15MM
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Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
RIEMEN SYNCHRON HTD L 480MM B 30MM
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Dual/Triple-Voltage µP Supervisory Circuits
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Low-Noise, Low-Dropout, 150mA Linear Regulators with '2982 Pinout
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RIEMEN SYNCHRON HTD L 1200MM B 200MM
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RIEMEN SYNCHRON HTD L 1600MM B 200MM
RIEMEN SYNCHRON HTD L 1440MM B 200MM
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TE Connectivity, Ltd.
Amphenol, Corp.
Rubycon, Corp.
A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
AMIC Technology
M12L16161A-5TIG M12L16161A-7BIG M12L16161A-7TIG M1 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
512K x 16Bit x 2Banks Synchronous DRAM
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N08L6182AB27I N08L6182AB27IT N08L6182AB7I N08L6182 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16bit
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8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
8 Mb, 1.8 V Low Power SRAM; Package: BGA Green; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
8 Mb, 1.8 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
ON Semiconductor
 
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