| PART |
Description |
Maker |
| SSTUH32866EC_G SSTUH32866 SSTUH32866EC SSTUH32866E |
1.8 V high output drive 25-bit 1 : 1 or 14-bit 1 : 2 configurable registered buffer with parity for DDR2 RDIMM applications
|
Philips
NXP Semiconductors N.V.
|
| K4H511638C-UC K4H511638C-UCA2 K4H511638C-UCB0 K4H5 |
8-Bit, 20 kSPS ADC Serial Out, uProcessor Periph./Standalone, Rem. Op w/Ser. Data Link, Mux option 14-SOIC 荤的512Mb芯片DDR SDRAM内存规格
Single Wide Bandwidth High Output Drive Single Supply Op Amp 8-PDIP -40 to 125 荤的512Mb芯片DDR SDRAM内存规格
512Mb C-die DDR SDRAM Specification 荤的512Mb芯片DDR SDRAM内存规格
Single Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125 荤的512Mb芯片DDR SDRAM内存规格
Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125 荤的512Mb芯片DDR SDRAM内存规格
8-Bit, 392 kSPS ADC Parallel Out, Microprocessor Peripheral, On-Chip Track-and-Hold, Single Channels 20-PDIP 荤的512Mb芯片DDR SDRAM内存规格
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| TMP47C1237 TMP47C1237N TMP47C1637 TMP47C1637N |
2.5V, 170 MHz, 10 Output SSTL-2 Zero Delay Clock Driver, High Drive for Stacked DDR DIMM
CMOS 4-BIT MICROCONTROLLER
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| K4H560438E-NC/LA2 K4H560838E-NC/LA2 K4H560438E-NC/ |
256Mb E-die DDR SDRAM Specification 54pin sTSOP(II) 256Mb的电子芯片DDR SDRAM内存规格54pin sTSOP（二
DIODE ZENER SINGLE 300mW 43Vz 5mA-Izt 0.02 0.05uA-Ir 33 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格54pin sTSOP（二
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 20-HTSSOP 0 to 70
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-SOIC -40 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-SOIC
256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| TC429EOA TC429EOA713 TC429EPA TC429CPA TC429MJA |
The TC429 is a high-speed,single CMOS-level translator and driver.Designed specifically to drive highly capacitive power MOSFET gates,the ...
The TC429 is a high-speed,single CMOS-level translator and driver.Designed specifically to drive highly capacitive power MOSFET gates,the TC429 features 2.5 Ω output impedance and 6A peak output current drive. A 2500pF capacitive loa
|
Microchip
|
| 5962-0420501HYC 5962-0420501HPA 5962-0420501HXA 59 |
0.5 Amp Output Current IGBT Gate Drive Optocoupler 0.5安培输出电流IGBT栅极驱动光电耦合
5962-0420501HYC · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420501HPA · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420501HXA · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420501HYA · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420501HPC · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5150-200 · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5150-300 · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5151-200 · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5150-100 · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5151-100 · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
|
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| 2SK2991 |
N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SJ438 |
P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| ICPL-3120 |
2.5A Output Current, High CME Gate Drive Optocoupler
|
ISOCOM COMPONENTS
|
| MAX423009 MAX4231ARTT MAX4231AUTT MAX4231AXTT MAX4 |
High-Output-Drive, 10MHz, 10V/渭s, Rail-to-Rail I/O Op Amps with Shutdown in SC70
High-Output-Drive, 10MHz, 10V/楼矛s, Rail-to-Rail I/O Op Amps with Shutdown in SC70
High-Output-Drive, 10MHz, 10V/μs, Rail-to-Rail I/O Op Amps with Shutdown in SC70
|
http://
Maxim Integrated Products
Maxim Integrated Produc...
|
