| PART |
Description |
Maker |
| FCX718 |
Extremely low equivalent on-resistance RCE(sat) 96mù at 2.5A.
|
TY Semiconductor Co., Ltd
|
| IPW65R190C6 IPA65R190C6 IPP65R190C6 |
650 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
650V CoolMOS C6 Power Transistor
Extremely low losses due to very low FOM Rdson*Qg and Eoss
|
Infineon Technologies AG
|
| UR5HC703 |
Extremely Low-Power Keyboard Encoder(???????????????
|
Semtech Corporation
|
| IRFR1205PBF IRFU1205PBF IRFR1205TRPBF IRFR1205PBF- |
Ultra Low On-Resistance
HEXFET Power MOSFET
ULTRA LOW ON RESISTANCE
|
International Rectifier
|
| IRFR3910TRR IRFR3910TRLPBF IRFRU3910 |
16 A, 100 V, 0.115 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra Low On-Resistance
Ultra Low On-Resistance
|
International Rectifier
|
| HSMP-482B HSMP-4820 HSMP-3820 HSMP-3822 HSMP-3823 |
HSMP-482B · RF power limiter diode
HSMP-4820 · RF power limiter diode
HSMP-3820 · Low resistance PIN switch diode
HSMP-3822 · Low resistance PIN switch diode
HSMP-3823 · Low resistance PIN switch diode
HSMP-3824 · Low resistance PIN switch diode
|
Agilent (Hewlett-Packard)
|
| FMMT720 |
625mW power dissipation, Extremely low saturation voltage e.g. 10mV typ
|
TY Semiconductor Co., Ltd
|
| PMF370XN |
N-channel mTrenchMOS extremely low level FET
N-channel uTrenchmos (tm) extremely low level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PMGD370XN |
Dual N-channel uTrenchmos (tm) extremely low level FET
Dual N-channel mTrenchMOS-TM extremely low level FET
|
Philips Semiconductors
|
| HT9274 9274 |
Power Resistor; Series:TGH; Resistance:5kohm; Resistance Tolerance: /- 5 %; Power Rating:200W; Mounting Type:Chasis/Heat-Sink; Packaging:Bulk
Quad Micropower Op Amp
From old datasheet system
|
Holtek Semiconductor Inc.
|
| 2SK3652 |
Low on-resistance, low Qg High avalanche resistance For high-speed switching
|
TY Semiconductor Co., Ltd
|
