| PART |
Description |
Maker |
| GMR30H150CTPF3T GMR30H150C GMR30H150CTA3R GMR30H15 |
HIGH VOLTAGE POWER SCHOTTKY RECTIFIE
|
GAMMA[Gamma Microelectronics Inc.]
|
| GB840 |
SCHOTTKY BARRIER DIODE VOLTAGE 40V, CURRENT 8A RECTIFIE
|
GTM CORPORATION
|
| 1SMA43CAT3G |
400 Watt Peak Power Zener Transient Voltage Suppressors 400 W, BIDIRECTIONAL, SILICON, TVS DIODE
|
ON Semiconductor
|
| M68732LA 68732LA |
400 MHz - 450 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
From old datasheet system
Silicon MOS FET Power Amplifier, 400-450MHz 7W FM PORTABLE
SILICON MOS FET POWER AMPLIFIER, 400-450MHz, 7W, FM PORTABLE
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 400-450 MHz 7W FM PORTABLE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| P4KE11 P4KE10 P4KE100 P4KE20 P4KE27 P4KE33 P4KE180 |
GPP TRANSIENT VOLTAGE SUPPRESSOR (400 WATT PEAK POWER 1.0 WATT STEADY STATE) 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41
|
RECTRON[Rectron Semiconductor]
|
| P4KE51CA-T P4KE62A-T |
400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-41
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41
|
RECTRON LTD
|
| TZB400CA TZB170A TZB47B |
400 W, BIDIRECTIONAL, SILICON, TVS DIODE
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE
|
|
| BZW04P15B/51 BZW404-136 W0478B |
400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL
|
GENERAL SEMICONDUCTOR INC
|
| P4FMAJ170-W P4FMAJ170C P4FMAJ170CA |
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
|
RECTRON LTD
|
| MJW16110 MJ16110 ON1988 |
POWER TRANSISTORS 15 AMPERES 400 VOLTS 175 AND 135 WATTS 15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-247AE
From old datasheet system
NPN Silicon Power Transistors
|
Motorola Mobility Holdings, Inc.
http://
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
|
