| PART |
Description |
Maker |
| BLL1214-250R |
L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
LDMOS L-band radar power transistor
|
NXP Semiconductors N.V.
|
| BLS6G2731S-130 |
LDMOS S-band radar power transistor
|
Philips Semiconductors
|
| BLS7G2933S-150 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors N.V.
|
| BLL6H1214LS-250 |
LDMOS L-band Radar Power Transistor
|
NXP
|
| BLS6G2933P-200 |
LDMOS S-Band radar pallet amplifier 2900 MHz - 3300 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
|
| BLL1214-250 BLL1214-250_2 |
L-band radar LDMOS transistor
From old datasheet system
|
Philips
|
| BLS7G2729L-350P-15 |
LDMOS S-band radar power transistor
|
NXP Semiconductors
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| HVV1214-100 HVV1214-100-EK |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200渭s Pulse, 10% Duty For Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| BLF6G22-180RN BLF6G22LS-180RN |
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Power LDMOS transistor BLF6G22-180RN<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
Power LDMOS transistor BLF6G22-180RN<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| AM82731-025 2768 |
From old datasheet system
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| 0910-300M |
Bipolar/LDMOS Transistor
300 Watts - 50 Volts, 150us, 5% Radar 890 - 1000 MHz
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
|
