| PART |
Description |
Maker |
| 2SD1223 E001101 |
NPN EPITAXIAL TYPE (SWITCHING/ HAMMER DRIVE/ PULSE MOTOR DRIVE/ POWER AMPLIFIER APPLICATIONS)
SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPUCATIONS
NPN EPITAXIAL TYPE (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| JXWBPA-16000-16640-33 |
Pulse Power Amplifier
|
American Accurate Components, Inc.
|
| 23Z247SMD PE-62252A PE-62250A PE-62245A PE-62254A |
2 Watt Pulse Electrostatically Shielded, 500 mW Pulse, RF Pulse and Control Transformers
|
Pulse Engineering, Inc.
|
| 2SD2481 |
NPN EPITAXIAL TYPE (PULSE MOTOR DRIVE/ HAMMER DRIVE/ SWITCHING/ POWER AMPLIFIER APPLICATIONS)
NPN EPITAXIAL TYPE (PULSE MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 15KW160 15KW160A 15KW260 15KW260A 15KW240 15KW240A |
160.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
260.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
240.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
220.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
110.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
200.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
280.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
170.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
180.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
|
MDE Semiconductor
|
| VZS-3530J1 |
4.25 kW Compact Pulse Amplifier
|
Communications & Power Industries, Inc.
|
| SA0107 SA01-6 |
PULSE WIDTH MODULATION AMPLIFIER
|
Cirrus Logic
|
| MSA240 |
PULSE WIDTH MODULATION AMPLIFIER
|
APEX[Apex Microtechnology]
|
| PH2729-150M07 PH2729-150M |
S BAND, Si, NPN, RF POWER TRANSISTOR
Radar Pulsed Power Transistor 150W, 2.7-2.9 GHz, 100レs Pulse, 10% Duty
Radar Pulsed Power Transistor 150W, 2.7-2.9 GHz, 100渭s Pulse, 10% Duty
Radar Pulsed Power Transistor 150W, 2.7-2.9 GHz, 100μs Pulse, 10% Duty
|
Tyco Electronics
|
| 2SD1222 |
Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications
|
TOSHIBA
|
| 2SB90807 |
Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications
|
Toshiba Semiconductor
|
| MAPR-001011-850S00 |
L BAND, Si, NPN, RF POWER TRANSISTOR ROHS COMPLIANT, HERMETIC SEALED, CERAMIC PACKAGE-2
Avionics Pulsed Power Transistor 850W, 1025-1150 MHz, 10μs Pulse, 1% Duty
Avionics Pulsed Power Transistor 850W, 1025-1150 MHz, 10楼矛s Pulse, 1% Duty
|
M/A-COM Technology Solutions, Inc.
|
