| PART |
Description |
Maker |
| CM1200HG-66H09 |
HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| CM200HG-130H |
HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| CM1200HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| CM1200HA-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM100HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM1200HA-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM800HA-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM600DY-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| PM20CSJ060 PM400DAS060 PM100DSA120 PM300CVA060 PM3 |
IPMS Modules: 600V
MITSUBISHI INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
IPMS Modules:1200V
50Amp - intelligent power modules
|
Mitsubishi Electric Corporation
|
| MDD310-22N1 MDD310 MDD310-08N1 MDD310-12N1 MDD310- |
High Power Diode Modules 305 A, 1600 V, SILICON, RECTIFIER DIODE
TV 100C 100#22D SKT RECP
Thyristor and Rectifiers Modules
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| RM20C1A-XXS RM20DA/CA/C1A-XXS RM20CA-XXS RM20DA-XX |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
