PART |
Description |
Maker |
LT5503 LT5503EFE |
1.2GHz to 2.7GHz Direct IQ Modulator and Mixer
|
Linear Technology
|
HSMS-B2825 HSMS-B2825-TR2G HSMS-2820-BLKG HSMS-282 |
HSMS-282P · RF mixer/detector diode HSMS-282K · RF mixer/detector diode Surface Mount RF Schottky Barrier Diodes HSMS-282F · RF mixer/detector diode HSMS-2829 · RF mixer/detector diode HSMS-282R · RF mixer/detector diode HSMS-2825 · RF mixer/detector diode HSMS-2823 · RF mixer/detector diode HSMS-2822 · RF mixer/detector diode HSMS-2824 · RF mixer/detector diode HSMS-2820 · RF mixer/detector diode HSMS-282L · RF mixer/detector diode
|
Agilent(Hewlett-Packard... http:// HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
YMU759 |
1-2 CABLE/SATELLITE TV SPLITTER, 2GHZ 合成芯片的手提电 1-2 CABLE/SATELLITE TV SPLITTER, 2GHZ SYNTHESIS LSI FOR PORTABLE TELEPHONE
|
Electronic Theatre Controls, Inc. YAMAHA CORPORATION ETC List of Unclassifed Manufacturers
|
MMBD354LT1 |
Dual Hot Carrier Mixer Diodes(双热载流子混频器二极 SILICON, UHF BAND, MIXER DIODE, TO-236AB
|
ON Semiconductor
|
TPD02-0.5G02S |
0.5-2GHz 2-Way Power Divider
|
Transcom, Inc.
|
TPD03-0.5G02S |
0.5-2GHz 3-Way Power Divider
|
Transcom, Inc.
|
MGFC40V6472 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4 - 7.2GHz频段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
TD6116P TD6118P TD6120P TD6122P TD6124P TD6126P EE |
1.2GHz PRESCALER From old datasheet system
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
YMU757B |
1-4 CABLE/SATELLITE TV SPLITTER, 2GHZ
|
Yamaha Corporation
|
SY89230U10 |
3.2GHz Precision, LVPECL ÷3, ÷5 Clock Divider
|
Micrel Semiconductor
|
Q62702-F494 BFR14B |
NPN SILICON MICROWAVE TRANSISTOR UP TO 2GHz
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
MAX2754EUA MAX2754 |
1.2GHz VCO with Linear Modulation Input
|
MAXIM[Maxim Integrated Products]
|