| PART |
Description |
Maker |
| OD100 |
SUPER HIGH-POWER GaAlAs IR EMITTERS
|
OptoDiode Corp
|
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| OD-880W |
HIGH-POWER GaAlAs IR EMITTERS
|
OptoDiode Corp
|
| PDI-E809 |
GaAlAs High Power IR LED Emitters
|
Advanced Photonix, Inc.
|
| OD-880-C |
HIGH-POWER GaAlAs IR EMITTER CHIPS
|
OptoDiode Corp
|
| OD-24X24-C |
HIGH-POWER GaAlAs EMITTER CHIPS
|
OptoDiode Corp
|
| PDI-E940SM |
GaAlAs High power IR LED Emitters
|
API Delevan
|
| PDI-E835 |
GaAlAs High power IR LED Emitters (660nm/940nm)
|
Advanced Photonix, Inc.
|
| BL-B6139B |
LED GaAlAS /GaAs Super Red Low current requirement.
|
BRIGHT LED ELECTRONICS CORP
|
| TSAL5300-FSZ TSAL5300-GSZ |
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| TSAL5300 TSAL530009 TSAL5300-MSZ |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
