PART |
Description |
Maker |
GS8162Z18B-133 GS8162Z18B-133I GS8162Z18B-200 GS81 |
133MHz 8.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 200MHz 6.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 150MHz 7.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 250MHz 5.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 225MHz 6ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 166MHz 7ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 200MHz 6.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 225MHz 6ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 133MHz 8.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 166MHz 7ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 250MHz 5.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
GS8161Z18BT-150I GS8161Z18BGT-150 GS8161Z32BD-150 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 7.5 ns, PQFP100 18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 32 ZBT SRAM, 7.5 ns, PBGA165 18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 7.5 ns, PBGA165
|
GSI Technology, Inc.
|
K7I323682M K7I321882M K7M161825A-QCI65 |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM 512Kx36 & 1Mx18 Pipelined NtRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
IDT71P72804S250BQ IDT71P72104 IDT71P72104S167BQ ID |
18Mb Pipelined QDRII SRAM Burst of 2
|
IDT[Integrated Device Technology]
|
GS8162Z18BB-200 GS8162Z36BB-200 GS8162Z18BB-150 GS |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
http://
|
GS8161Z36BD-150 GS8161Z18BD-200 GS8161Z36BD-200 GS |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
http://
|
GS8162ZV72CC GS8162ZV72CC-150 GS8162ZV72CC-150I GS |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI Technology
|
IS61VPD102418A-250TQ IS61VPD102418A-250TQI IS61VPD |
512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM 512K X 36 CACHE SRAM, 2.6 ns, PBGA165
|
Integrated Silicon Solution, Inc. INTEGRATED SILICON SOLUTION INC
|
IS61VPD51236A IS61VPD51236A-200B3 IS61VPD51236A-20 |
512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
IS61VPS51236A IS61VPS51236A-200B2 IS61VPS51236A-20 |
256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
IS61LPS25672A-250B1 IS61LPS25672A-250B1I IS61LPS10 |
256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 512K X 36 CACHE SRAM, 3.1 ns, PBGA165 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
|
Integrated Silicon Solution, Inc. MEAN WELL Enterprises Co., Ltd.
|
GS8170DD36C-250I GS8170DD36C GS8170DD36C-200 GS817 |
18Mb Common I/O DDR SigmaRAMs 18Mb ヒ1x2Lp CMOS I/O Double Data Rate SigmaRAM
|
GSI Technology
|