| PART |
Description |
Maker |
| BGT24MTR12 |
Silicon Germanium 24 GHz Transceiver MMIC
|
Infineon Technologies A...
|
| BGT24AT2 |
Silicon Germanium 24 GHz Transmitter MMIC
|
Infineon Technologies A...
|
| SGL0622Z |
5MHz to 4000MHz LOW NOISE MMIC AMPLIFIER SILICON GERMANIUM
|
RF Micro Devices
|
| BGA614 |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 12dBm, SOT343
Silicon Germanium Broadband MMIC Amplifier
|
INFINEON[Infineon Technologies AG]
|
| BGA612 |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 8dBm, SOT343
Silicon Germanium Broadband MMIC Amplifier
|
INFINEON[Infineon Technologies AG]
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| NESG340034 NESG340034-T1 |
NPN Silicon Germanium RF Transistor
|
Renesas Electronics Corporation
|
| NESG3400M01 NESG3400M01-T1 |
NPN Silicon Germanium RF Transistor
|
Renesas Electronics Corporation
|
| NESG3031M05-T1 NESG3031M05 |
NPN SILICON GERMANIUM RF TRANSISTOR
|
CEL[California Eastern Labs]
|
| NESG3033M14 NESG3033M14-A NESG3033M14-T3 NESG3033M |
NPN SILICON GERMANIUM RF TRANSISTOR
|
Duracell
California Eastern Labs
|
| BFP640F07 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
