| PART |
Description |
Maker |
| 2SB1101 2SB1102 |
(2SB1101 / 2SB1102) LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602
|
Hitachi Semiconductor
|
| 2N6052 2N6058 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
12 AMPERE COMPLEMENTARY
|
ON Semiconductor
|
| SI1563EDH |
Complementary 20-V (D-S) Low-Threshold MOSFET
|
VISAY[Vishay Siliconix]
|
| SI1563EDH |
Complementary 20-V (D-S) Low-Threshold MOSFET
|
Vishay Intertechnology,Inc.
|
| 2SA777 2SA0777 |
For low-frequency driver amplification Complementary
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| UPA2690T1R |
COMPLEMENTARY MOSFET Low on-state resistance
|
Renesas Electronics Corporation
|
| SI1501DL |
Complementary 20-V (D-S) Low-Threshold MOSFET 补充20 - V（下副秘书长）低阈值MOSFET
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| ZXTD6717E6 ZXTD6717E6TA ZXTD6717E6TC |
COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS
|
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| 2SC1060 2SC1061 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SA670 and 2SA671
|
List of Unclassifed Manufacturers
ETC
Unknow
|
