| PART |
Description |
Maker |
| BL-BUBGE301 |
Chip material: AlGaInP/GaAs
|
BRIGHT LED ELECTRONICS CORP
|
| BL-BS03V1 |
LED AlGaInP/GaAs Super Red Low current requirement.
|
BRIGHT LED ELECTRONICS CORP
|
| BL-BKG3V1 |
LED AlGaInP/GaAs Super Yellow Low current requirement.
|
BRIGHT LED ELECTRONICS CORP
|
| BL-BG33J4 |
LED AlGaInP/GaAs Super Red Low current requirement.
|
BRIGHT LED ELECTRONICS CORP
|
| BL-BK83J7M |
LED AlGaInP/GaAs Super Yellow Low current requirement.
|
BRIGHT LED ELECTRONICS CORP
|
| BL-BF03V1 |
24 bit Serial Digital Controller for ALD500R w/ LCD Display Interface, 28L PDIP 发光二极管铝镓铟砷化镓超级红低电流的要求
LED AlGaInP/GaAs Super Red Low current requirement.
|
Bright LED Electronics, Corp.
Bright LED Electronics Corp.
|
| BL-BJH3R4V-1 |
10mV Quad P-Channel Matched Pair MOSFET Array, Enhancement Mode, 14L SOIC
LED AlGaInP/GaAs Super Orange Low current requirement.
|
Bright LED Electronics Corp.
|
| BL-BJH3V1 |
Quad N-Channel Programmable Matched Pair MOSFET Array, 16L CDIP, EPAD Enabled
LED AlGaInP/GaAs Super Orange Low current requirement.
|
Bright LED Electronics Corp.
|
| BL-BJ33V4V-1 |
Dual N-Channel & Dual P-Channel Matched MOSFET Pair, Enhancement Mode, 14L CDIP
LED AlGaInP/GaAs Super Orange Low current requirement.
|
Bright LED Electronics Corp.
|
| AS179-92LF AS197-306 |
APN2015:GaAs FETs as Control Devices|DC-6 GHz Plastic Packaged and Chip|SPST
AS197-306:PHEMT GaAs IC High Power SP2T and SP3T S|DC-6 GHz Plastic Packaged and Chip|SPST AS197 - 306：PHEMT的砷化镓集成电路高功率SP2T和SP3T秒|的DC - 6GHz的塑料包装和芯片|聚苯乙烯
|
Amphenol, Corp.
|
