| PART |
Description |
Maker |
| SDP20S3010 SDP20S30 |
Silicon Carbide Schottky Diode Switching behavior benchmark
|
Infineon Technologies AG
|
| IXFR180N06 |
HiPerFETTM Power MOSFETs 180 A, 60 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| K9KAG08U0MPIB00 K9KAG08U0M-PCB0000 K9KAG08U0MPCK00 |
sheet of this product is either in preparation or is not effective yet. For more details about product specifications or technical files, please inquire through Contact us
|
Samsung semiconductor
|
| IXFRB24N50Q IXFR24N50Q IXFR26N50Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HIPERFET POWER MOSFETS ISOPLUS247 (ELECTRICALLY ISOLATED BACK SURFACE)
|
IXYS Corporation
|
| IXFH13N80Q IXFT13N80Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs Q Class
From old datasheet system
|
IXYS[IXYS Corporation]
|
| IXFE44N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| IXFX52N60Q2 IXFK52N60Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS
Advanced Technical Information
|
IXYS Corporation
|
| V850E1 V850E_SV2 V850E_IA1 V850E_IA2 V850E_IA3 V85 |
V850E/IA2 Flash product ROM: 128 KB, RAM: 6 KB
V850E/IA2 Mask product ROM: 128 KB, RAM: 6 KB
V850E/IA3 Flash product ROM: 256 KB, RAM: 12 KB
ROM-less version; Internal RAM: 4K bytes
32-bit RISC single-chip microcontroller V850E/SV2
V850E/IA4 Flash memory product ROM: 256 KB, RAM: 12 KB
32-Bit Microprocessor Core
|
NEC[NEC]
|
| IXFT12N100 IXFT10N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
From old datasheet system
|
IXYS[IXYS Corporation]
|
