| PART |
Description |
Maker |
| HYE25L128160AC-8 HYB25L128160AC-75 |
128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES 128 - Mbit同步低功率DRAMCHIPSIZE套票
|
Infineon Technologies A...
Infineon Technologies AG
|
| CY14E101J2-SXIT CY14B101J1-SXI CY14B101J1-SXIT CY1 |
1-Mbit (128 K 8) Serial (I<sup>2</sup>C) nvSRAM
1-Mbit (128 K 8) Serial (I-2C) nvSRAM
|
Cypress
|
| M36P0R9070E0 |
512 Mbit Flash memory 128 Mbit (Burst) PSRAM
|
Numonyx
|
| M36L0R7040B0 M36L0R7040T0 |
128 Mbit Flash Memory and 16 Mbit PSRAM 1.8V Supply Multi-Chip Package
|
STMicroelectronics
|
| AT52SQ1283J |
128-Mbit Flash 32-Mbit PSRAM Stack Memory.
|
Atmel
|
| JS28F128P33BF70 JS28F128P33TF70A PC28F640P33BF60A |
Numonyx? P33-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell (SBC)
|
Micron Technology
Microchip Technology
Numonyx B.V
|
| NAND01G-A NAND128-A NAND256-A NAND01GR3A0AN1 NAND0 |
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
ST Microelectronics
|
| M36L0R7060T1 M36L0R7060B1 M36L0R7060B1ZAQE M36L0R7 |
128 Mbit (Multiple Bank, Multilevel, Burst) Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package
|
STMicroelectronics
ST Microelectronics, Inc.
|
| IDT72V8988 IDT72V8988DB IDT72V8988J IDT72V8988J8 7 |
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128
128 x 128 TSI, 4 I/O at 2Mbps, Variable/Constant Delay, 3.3V
|
Integrated Device Technology
IDT
|
| CY14B101NA-ZS25XI CY14B101NA-ZS25XIT CY14B101NA-ZS |
1-Mbit (128 K 8/64 K 16) nvSRAM
|
Cypress
|
| M36P0R9070E0ZACF M36P0R9070E0 M36P0R9070E0ZAC M36P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package 512兆位（x16插槽，多银行，多层次，多突发28兆位闪存（突发）移动存储芯片.8V电源，多芯片封装
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
