| PART |
Description |
Maker |
| OH004 OH10004OH004 |
GaAs device - GaAs Hall Devices
|
Matsshita / Panasonic
|
| L76761CSYC |
The Super Bright Yellow source color devices are made with DH InGaAIP on GaAs substrate Light Emitting Diode.
|
Kingbright Electronic
KINGBRIGHT[Kingbright Corporation]
|
| MGFC1403 MGFC1403-A12 |
For Microwave Low Noise Amplifiers N-Channel Schottky Barrier Gate Type
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
FOR MICROWAVE LOW-NOISE AMPLIFIERS /N-CHANNEL SCHOTTKY BARRIER GATE TYPE
FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| MBRF20150CT-Y MBRF20200CT-Y MBRF2060CT-Y |
Discrete Devices -Diode-Schottky
|
Taiwan Semiconductor
|
| SR815 |
Discrete Devices -Diode-Schottky
|
Taiwan Semiconductor
|
| MBR2035CT-Y MBR2045CT-Y MBR2090CT-Y |
Discrete Devices -Diode-Schottky
|
Taiwan Semiconductor
|
| MBRH12060R MBRH12045R |
High Power Schottky Rectifiers - Half Pak Devices
|
America Semiconductor
|
| 1N5827R |
High Power Schottky Rectifiers - DO5 Stud Devices
|
America Semiconductor
|
| MBR7580 MBR7580R MBR7560R |
High Power Schottky Rectifiers - DO5 Stud Devices
|
America Semiconductor
|
| Q62702-D1288 BAT15-020S BAT15-050S BAT15-090S BAT1 |
RESISTOR,SMD1206,1.1K,1/4W,5% SILICON, LOW BARRIER SCHOTTKY, KA BAND, MIXER DIODE
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL
14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
