| PART |
Description |
Maker |
| LD7215 LD7215C LD7215D |
6 GHz / 3 kW / HELIX TYPE / PPM FOCUSING / HIGH POWER GAIN / FLAT GAIN VARIATION
6 GHz, 3 kW, HELIX TYPE, PPM FOCUSING, HIGH POWER GAIN, FLAT GAIN VARIATION 6千兆赫，3千瓦，螺旋式，分之为重点，高功率增益平坦增益变化
|
NEC Corp.
NEC, Corp.
|
| BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
|
Siemens Semiconductor Group
|
| BGA318 Q62702-G0043 |
From old datasheet system
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器（级0瓦，增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫）
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| LD7202W LD7202 LD7202A LD7202B LD7202L |
14 GHz, 600 W CW, PPM FOCUSING, HIGH POWER GAIN 14千兆赫，600 W连续，分之为重点，高功率增益
14 GHz / 600 W CW / PPM FOCUSING / HIGH POWER GAIN
|
NEC Corp.
NEC, Corp.
NEC[NEC]
|
| TSDF2020W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise;
25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| RFMA0912-0.5W-Q7 |
9.5 - 11.7 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
| RFMA1415-1W-Q7 |
14.4 - 15.4 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
| LD7235 |
30 GHz, 150 W CW, CONDUCTION COOLING, HIGH POWER GAIN
|
NEC Corp.
NEC[NEC]
|
| LD7267 |
30 GHz / 100 W CW / CONDUCTION COOLING / HIGH POWER GAIN
30 GHz, 100 W CW, CONDUCTION COOLING, HIGH POWER GAIN
|
NEC
|
| 636ST89E HMC636ST8911 HMC636ST89E |
GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| CGD1042HI |
1 GHz, 22 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
