| PART |
Description |
Maker |
| IRF7534D1 IRF7534D1TR |
-20V FETKY - MOSFET and Schottky Diode in a Micro 8 package
FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.055ohm, Schottky Vf=0.39V)
Co-packaged HEXFET Power MOSFET and Schottky Diode(同封HEXFET晶体管和肖特基二极管)
|
IRF[International Rectifier]
|
| NTHD4P02F NTHD4P02FT1 NTHD4P02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET
Power MOSFET and Schottky Diode 2.2 A, 20 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET
|
ONSEMI[ON Semiconductor]
|
| SMDT-650H-12 SMDT-650H-14 SMDT-650H-16 SMDT-650H-1 |
Diod-Thyristor Module
|
SEMPO ELECTRONIC Limited
|
| IRF7807VD2PBF |
Co-Pack N-channel HEXFET? Power MOSFET and Schottky Diode
FETKY MOSFET / SCHOTTKY DIODE
|
International Rectifier
|
| NTLJF1103P NTLJF1103PT1G |
Power MOSFET Schottky Diode
Power MOSFET and Schottky Diode -8 V, -4.3 A, μCool? P-Channel, with 2.0 A Schottky Barrier Diode, 2 x 2 mm, WDFN
|
ON Semiconductor
|
| UL1970N UL1970 |
Ukad sterujcy punktowym wskanikiem zoonym z diod wieccych
OBUDOWA CE 71
|
Ultra CEMI
ETC
|
| IRG4BC20SD-SPBF |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD
|
International Rectifier
|
| L608 FMD80-0045PS |
MOSFET Modules
Chopper with Trench Power MOSFET and Schottky Diode
|
IXYS[IXYS Corporation]
|
| IRF7807D1TR IRF7807D1-TR |
8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
30V FETKY - MOSFET and Schottky Diode in a SO-8 package
|
International Rectifier
|
| NTLJF3118N |
Power MOSFET and Schottky Diode 20 V, 4.6 A, μCool™ N-Channel, with 2.0 A Schottky Barrier Diode
|
ON Semiconductor
|
| IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
Vishay Intertechnology, Inc.
|
|
