| PART |
Description |
Maker |
| BZA418A |
Quadruple ESD transient voltage suppressor
|
NXP Semiconductors
|
| BZA420A |
Quadruple ESD transient voltage suppressor 四路ESD瞬态电压抑制器
|
NXP Semiconductors N.V.
|
| BZA418A BZA418A_1 |
From old datasheet system
Quadruple ESD transient voltage suppressor
|
PHILIPS[Philips Semiconductors]
|
| M28W320BB 7584 M28W320BB100N6T M28W320BB100ZB1T M2 |
Quadruple ESD transient voltage suppressor - Cd max.: 240 pF; IRM max: 2A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 5.6 V; VRWM: 3 V
Quadruple ESD transient voltage suppressor - Cd max.: 48 pF; IRM max: 0.1A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 20 V; VRWM: 15 V
CLAMP
32 Mbit (2Mb x16/ Boot Block) 3V Supply Flash Memory
From old datasheet system
32 MBIT (2MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
意法半导
STMicroelectronics
|
| M28W320C-GBT M28W320CB100GB1T M28W320CB100GB6T M28 |
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory
32 Mbit 2Mb x16, Boot Block Low Voltage Flash Memory
32 Mbit 2Mb x16/ Boot Block Low Voltage Flash Memory
Quadruple ESD transient voltage suppressor - Cd max.: 50 pF; IRM max: 0.1A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 20 V; VRWM: 15 V
Quadruple ESD transient voltage suppressor - Cd max.: 200 pF; IRM max: 0.7A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 6.2 V; VRWM: 4 V
|
意法半导
STMicroelectronics
|
| PESD5V0U4BW PESD5V0U4BF |
Ultra low capacitance bidirectional quadruple ESD protection arrays
|
NXP Semiconductors
|
| PESD5V0V4UG PESD3V3V4UG PESDXV4UG |
VERY LOW CAPACITANCE QUADRUPLE ESD PROTECTION DIODE ARRAYS IN SOT353 PACKAGE
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| TVSA02V05C004 TVSA02V05C006 |
Transient Voltage ESD Suppressor
|
Cooper Bussmann, Inc.
|
| CEGS035V0-G CEAS0312V-G CEAS0324V-G CEAS035V0-G CE |
Bidirectional ESD / Transient Suppressor
|
COMCHIP[Comchip Technology]
|
| CEF CEE CEEN165V0-G |
Bidirectional ESD / Transient Suppressors
|
COMCHIP[Comchip Technology]
|
