| PART |
Description |
Maker |
| 2SA1770 2SC4614 2SA1770S 2SC4614S 2SC4614R |
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SPAK
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | SIP
High-Voltage Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| CSB649AB |
20.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 120 hFE.
|
Continental Device India Limited
|
| CSD669AB |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 120 hFE.
|
Continental Device India Limited
|
| BCX29 BF299 BF298 BFR58 BC312 MH7301 BF294 BC533 |
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 200MA I(C) | TO-92
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 100MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 100MA I(C) | TO-39
MAX 3000A CPLD 512 MC 208-PQFP
晶体管|晶体管|叩| 160V五（巴西）总裁| 100mA的一c）| TO - 220AB现有
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-39 晶体管|晶体管|叩| 160V五（巴西）总裁| 100mA的一（c）| TO - 39封装
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | TO-92
|
TE Connectivity, Ltd.
|
| 2SA1075 2SA1076 |
160V PNP silicon general purpose high speed power transistor
SILICON HIGH SPEED POWER TRANSISTOR
|
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Microelectronics
|
| DXT5551P5-13 |
160V NPN HIGH VOLTAGE TRANSISTOR PowerDI?5
|
Diodes Incorporated
|
| 2SA916 2SA916K |
PNP SILICON TRANSISTOR
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 50MA I(C) | TO-221VAR
|
ETC
NEC
Electronic Theatre Controls, Inc.
|
| 2SC2983Y 2SC2983O |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-251AA 晶体管|晶体管|叩| 160V五（巴西）总裁| 1.5AI（丙）|51AA
|
3M Company
|
| 2SC2921 |
POWER TRANSISTORS(15A,160V,150W)
|
MOSPEC[Mospec Semiconductor]
|
| EN2007C EN2007 |
Bipolar Transistor, (-)160V, (-)1.5A, Low VCE(sat), (PNP)NPN Single PCP
High-Voltage Switching Applications
|
ON Semiconductor
Sanyo Semicon Device
|
