| PART |
Description |
Maker |
| CRIMPFOX-6T |
Comprehensive range of crimping pliers
|
PHOENIX CONTACT
|
| RJ11-6NX-X |
(RJ11-xN) UL Recognized CAS Certified
|
CII Technology
|
| EM484M3244VBE EM484M3244VBE-75F EM484M3244VBE-15 E |
Programmable CAS Latency
Synchronous DRAM
|
Eorex Corporation
|
| FR1ZZ-TP FR1ZZP FR1020GP |
1 A, 2000 V, SILICON, SIGNAL DIODE, DO-214AA HSMB, 2 PIN
1 Amp Glass Passivated Rectifier 1200 to 2000 Volts 1 A, 2000 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Components, Corp.
|
| KMM5362203C2W |
2Mx36 DRAM Simm Using 1Mx16 And 1Mx4 Quad Cas
|
Samsung Semiconductor
|
| KMM5364003CSW KMM5364003CSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
| KMM5361203C2WG KMM5361203C2W |
1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| KMM5364005BSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM5362205C2W |
2MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo
|
Samsung Semiconductor
|
| EM47FM0888SBA-15 EM47FM0888SBA--125A EM47FM0888SBA |
Double DATA RATE 3 low voltage SDRAM
Posted CAS by programmable additive latency
|
Eorex Corporation
|
| S1Q S1ZZ |
1 Amp Silicon Rectifier 1200 to 2000 Volts 1 A, 2000 V, SILICON, SIGNAL DIODE, DO-214AA
|
Micro Commercial Components Corp.
Micro Commercial Components, Corp.
|
