| PART |
Description |
Maker |
| MT49H8M36 |
288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II
|
Micron Technology
|
| IS49NLC18160 IS49NLC36800 IS49NLC93200 |
288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
|
Integrated Silicon Solution, Inc
|
| K4C89183AF-GIFB K4C89083AF-ACF5 K4C89083AF-ACF6 K4 |
288Mb x18 Network-DRAM2 Specification
|
SAMSUNG[Samsung semiconductor]
|
| CY7C43666-10AC CY7C43666-15AC CY7C43666-7AC CY7C43 |
1K/4K/16K x36/x18/x2 Tri Bus FIFO
|
Cypress Semiconductor
|
| CYD04S18V18 CYD04S36V18 |
(CYDxxS18(36)V18) 18-Mb/9-Mb/4-Mb x36/x18 FullFlex Dual-Ports
|
Cypress Semiconductor
|
| IBM041810TLAA-4 IBM043610TLAA-5F |
x18 Synchronous SRAM x18同步SRAM
x36 Synchronous SRAM x36同步SRAM
|
Teledyne Technologies, Inc.
Silicon Laboratories, Inc.
|
| IBM0418A81DLAB-5 IBM0418A81DLAB-4 IBM0418A81DLAB-3 |
x36 Fast Synchronous SRAM
x18 Fast Synchronous SRAM x18快速同步SRAM
|
Cypress Semiconductor, Corp.
|
| IBM04364ARLAA-6P IBM04184ARLAA-6P IBM04184ARLAA-6N |
x36 Fast Synchronous SRAM
x18 Fast Synchronous SRAM x18快速同步SRAM
|
BI Technologies, Corp.
|
| MT49H16M18C MT49H32M9C MT49H16M18CFM-XX MT49H32M9C |
288Mb SIO REDUCED LATENCY(RLDRAM II)
|
Micron Technology, Inc.
|
| IDT72V51236L6BB IDT72V51236L6BB8 IDT72V51256 IDT72 |
4Q x36 512K Multi-Queue, 3.3V
4Q x36 2M Multi-Queue, 3.3V
4Q x36 1M Multi-Queue, 3.3V
|
IDT
|
