PART |
Description |
Maker |
MT49H8M32 MT49H8M32FM |
REDUCED LATENCY DRAM RLDRAM
|
Micron Technology
|
LTC2400 |
24-Bit uPower No Latency ADC in SO-8 24-Bit Power No Latency Delta-SigmaADC in SO-8
|
Linear Technology Corporation
|
MT44K16M36 |
576Mb: x18, x36 RLDRAM 3
|
Micron Technology
|
SI4392DY SI4392DY06 |
N-Channel Reduced Qg, Fast Switching WFET? N-Channel Reduced Qg, Fast Switching WFET庐 N-Channel Reduced Qg, Fast Switching WFET㈢
|
Vishay Siliconix
|
SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V(D-S),Qg,快速开 N-Channel Reduced Qg, Fast Switching MOSFE
|
Vishay Intertechnology, Inc. Vishay Siliconix
|
CAT93C46AJ CAT93C46AJI CAT93C46AJI-2.5 CAT93C46AJ- |
72-Mbit QDR-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 72-Mbit QDR-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 256K (32K x 8) Static RAM 256 Kb (256K x 1) Static RAM 72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) Microwire Serial EEPROM 微型导线串行EEPROM
|
Atmel, Corp.
|
HYM72V4045GU-60 HYM72V4045GU-50 HYM64V4045GU-60 HY |
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M x 72 Bit ECC DRAM Module unbuffered 4M x 64 Bit DRAM Module unbuffered 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 50 ns, DMA168 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 3.3 4米64位江户内.3分72位江户记忆体模组 GIGASTATION2 SNAP FITTINGF CONN, IVORY 4M X 64 EDO DRAM MODULE, 60 ns, DMA168 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
|
Siemens Semiconductor G... Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
SI6820DQ |
N-Channel Reduced Qg / MOSFET with Schottky Diode From old datasheet system N-Channel, Reduced Qg, MOSFET with Schottky Diode
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28 2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL 2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
HM5113805F-6 HM5113805FLTD-6 HM5113805FTD-6 HM5112 |
DRAM Chip, EDO DRAM, 16MByte, 3.3V Supply, Commercial, TSOP II, 32-Pin 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
Hitachi Semiconductor
|
LTC2401 LTC2401CMS LTC2401IMS LTC2402 LTC2402CMS L |
1-/2-Channel 24-Bit µPower No Latency Delta-Sigma ADC in MSOP-10; Package: MSOP; No of Pins: 10; Temperature Range: -40°C to 85°C 1-CH 24-BIT DELTA-SIGMA ADC, SERIAL ACCESS, PDSO10 1-/2-Channel 24-Bit µPower No Latency Delta-Sigma ADC in MSOP-10; Package: MSOP; No of Pins: 10; Temperature Range: 0°C to 70°C 2-CH 24-BIT DELTA-SIGMA ADC, SERIAL ACCESS, PDSO10 1-/2-Channel 24-Bit µPower No Latency Delta-Sigma ADC in MSOP-10; Package: MSOP; No of Pins: 10; Temperature Range: -40°C to 85°C 2-CH 24-BIT DELTA-SIGMA ADC, SERIAL ACCESS, PDSO10 1-/2-Channel 24-Bit mPower No Latency DSTMADCs in MSOP-10 1-/2-Channel 24-Bit PowerNo Latency Delta-SigmaADC in MSOP-10 1-/2-Channel 24-Bit µPowerNo Latency Delta-SigmaADC in MSOP-10
|
Linear Technology, Corp.
|