| PART |
Description |
Maker |
| 27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40
Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
|
| KM616U4000BZ |
256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MB84256A-70P-SK MB84256A-10P-SK MB84256A-70PFTN MB |
CMOS 256K bit Low Power SRAM
CMOS 256 KBit Low Power SRAM
CMOS 256K-BIT LOW POWER SRAM
|
Fujitsu Component Limited.
|
| KM616FS4110ZI-10 KM616FS4110ZI-7 |
100ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
70ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
|
Samsung Electronic
|
| V53C104A V53C104AK V53C104AK-100 V53C104AK-80 V53C |
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic, Corp
|
| V53C104 V53C104P-12 V53C104Z-70 V53C104Z-70L V53C1 |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
MOSEL[Mosel Vitelic, Corp]
|
| V53C104F V53C104FP60L V53C104FP70 V53C104FK60 V53C |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
http://
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic, Corp.
|
| V53C104B V53C104BK70 V53C104BK70L V53C104BK80 V53C |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
MOSEL[Mosel Vitelic, Corp]
|
| LY62L25716 LY62L25716E LY62L25716GL LY62L25716GV L |
256K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| BS616LV4016 BS616LV4016EIP70 BS616LV4016AC BS616LV |
Asynchronous 4M(256Kx16) bits Static RAM
From old datasheet system
Circular Connector; No. of Contacts:55; Series:MS27473; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:16; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:16-35 RoHS Compliant: No
Very Low Power/Voltage CMOS SRAM 256K X 16 bit 非常低功电压CMOS SRAM56 × 16
JT 8C 8#16 SKT WALL RECP 非常低功电压CMOS SRAM56 × 16
Very Low Power/Voltage CMOS SRAM 256K X 16 bit 非常低功电压CMOS SRAM256 × 16
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
Brilliance Semiconducto...
|
| EM6323FR8ES-45L EM7323FR8ES-45L EM6645FR8ES-45L EM |
256K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
http://
Emerging Memory & Logic Solutions Inc
|
