| PART |
Description |
Maker |
| MGFC39V5964A C395964A MGFC39V5964 |
5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| EIA1616-8P |
16.2-16.4GHz, 8W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| MGFC36V5964A_04 MGFC36V5964A MGFC36V5964A04 |
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC38V5964_97 MGFC38V5964 MGFC38V596497 |
5.9 - 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V5964A |
5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BTA16-600BW3G BTA16-800BW3G BTA16-600BW3 |
Triac, 3 Quadrant Internally Isolated, 50 mA I-GT, 16 A I-T(RMS)
Triacs Silicon Bidirectional Thyristors
600V 16 A, 50mA Igt 3 Quadrant Internally Isolated Triac
|
ON Semiconductor
|
| BTA16-600SW3G BTA16-600SW3 |
Triac, 3 Quadrant Internally Isolated, 10 mA I-GT, 16 A I-T(RMS)
600V 16 A, 10mA Igt 3 Quadrant Internally Isolated Triac
|
On Semiconductor
|
| MGFL45V1920 L45V1920 |
From old datasheet system
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HFA3624 HFA3624IA HFA3624IA96 |
2.4GHz Up/Down Converter
|
INTERSIL[Intersil Corporation]
|
| RFD21737 RFD21738 RFD21731 RFD21734 |
2.4GHz RF Modules
|
RF Digital
|
| EL5166IS EL5166IS-T13 EL5166IS-T7 EL5166ISZ-T13 EL |
1.4GHz Current Feedback Amplifiers with Enable 1 CHANNEL, VIDEO AMPLIFIER, PDSO8
1.4GHz Current Feedback Amplifiers with Enable 1 CHANNEL, VIDEO AMPLIFIER, PDSO6
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
