| PART |
Description |
Maker |
| GPTR4180 |
3600 V phase controlled SCR
|
Green Power
|
| AR1107S36 AR1107 |
3600 V, 1215 A, 13.4 kA rectifier diode
|
POSEICO SPA
POSEICO[Power Semiconductors]
|
| SM3436-37HS |
3400-3600 MHz 5 Watt Linear Power Amplifier
|
Stealth Microwave, Inc.
|
| SMP6LC08-2P-T7 |
3600 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE SOP-16
|
ProTek Devices
|
| SMP6LC15-2P |
LOW CAPACITANCE TVS ARRAY 3600 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
|
ProTek Devices
|
| XMGG7-20B3 |
From old datasheet system
Surface Mount High Dynamic Range Mixer 3400-3600 MHz, Upconverter, High IP3
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| 2SC4666 |
High hFE: hFE = 600 3600 High collector current: IC = 150 mA (max)
|
TY Semiconductor Co., Ltd
|
| PDM-81M-13G PDM-81M-3.95G PDM-81M-3G PDM-81M-6G |
4000 MHz - 8000 MHz RF/MICROWAVE SPLITTER AND COMBINER, 0.8 dB INSERTION LOSS
3600 MHz - 4300 MHz RF/MICROWAVE SPLITTER AND COMBINER, 0.8 dB INSERTION LOSS
8000 MHz - 18000 MHz RF/MICROWAVE SPLITTER AND COMBINER, 2 dB INSERTION LOSS
Analog IC 模拟IC
0 POWER DIVIDERS / COMBINERS
|
MERRIMAC INDUSTRIES INC
Merrimac Industries, Inc.
|
| EMH2602 |
3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| 24M564J 22M364J 19M393J 22M304J |
1 ELEMENT, 5600 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3600 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 390 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3000 uH, GENERAL PURPOSE INDUCTOR
|
GOWANDA ELECTRONICS CORP
|
| FDD8426H |
40V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench垄莽 MOSFET N-Channel: 40 V, 12 A, 12 m楼? P-Channel: -40 V, -10 A, 17 m楼?
Dual N & P-Channel PowerTrench? MOSFET N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ
|
Fairchild Semiconductor
|
|
