| PART |
Description |
Maker |
| HY5S6B6DLF-BE HY5S6B6DLF-SE HY5S6B6DLFP-BE HY5S6B6 |
4Banks x1M x 16bits Synchronous DRAM
|
HYNIX[Hynix Semiconductor]
|
| HY5W6B6DLF-HE HY5W6B6DLF-PE HY5W6B6DLFP-HE HY5W6B6 |
4Banks x1M x 16bits Synchronous DRAM
|
Hynix Semiconductor
|
| HY5S6B6DLF-SE HY5S6B6DLF-BE HY5S6B6DSF-BE HY5S6B6D |
4Banks x1M x 16bits Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 9 ns, PBGA54
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| IS42SM16400G |
1M x 16Bits x 4Banks Low Power Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
| IS42VM16800F-75BLI |
SYNCHRONOUS DRAM, PBGA54
2M x 16Bits x 4Banks Mobile Synchronous DRAM
|
INTEGRATED SILICON SOLUTION INC
Integrated Silicon Solu...
|
| EM639165 EM639165TS-8L EM639165TS-75 EM639165TS-75 |
8Mega x 16bits SDRAM
|
Etron Technology Inc.
ETRON[Etron Technology Inc.]
ETRON[Etron Technology, Inc.]
|
| HYB39S128160CT HYB39S128800CT |
128-Mbit(4banks × 2MBit × 16) Synchronous DRAM(128M(4× 2M× 16)同步动态RAM)
128-Mbit(4banks × 4MBit × 8) Synchronous DRAM(128M(4× 4M× 8)同步动态RAM) 128兆位banks ×Mb × 8）同步DRAM28M的（4 × 4分列位8）同步动态RAM）的
|
SIEMENS AG
|
| HY62SF16404E |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62UF16406C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62LF16406C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
