| PART |
Description |
Maker |
| EPC4 EPC8 |
Configuration Devices for SRAM-Based LUT Devices
|
Altera Corporation
|
| EPC2TI32 EPC1 EPC1441PC8 EPC2LC20N EPC2LI20N EPC1P |
Configuration Devices for SRAM-Based LUT Devices
Configuration Devices for SRAM-Based
|
Altera Corporation
|
| EPD1600 |
8 BIT UC BASED DATA PROCESSOR IC FOR USE ON PAIM TOP DEVICES
|
ELAN Microelectronics C...
|
| EPD1600 |
8 BIT UC BASED DATA PROCESSOR IC FOR USE ON PAIM TOP DEVICES 8位市政局的数据处理器芯片上使用的妇女全面保健项目顶装
|
Elan Microelectronics, Corp.
|
| UPSD3214A-40T1T UPSD3233A-40T6T UPSD3213AV-24U1T U |
Flash Programmable System Devices with 8032 Microcontroller Core and 64Kbit SRAM 闪存可编程系统设备与8032微控制器核心4Kbit SRAM
CABLE ASSEMBLY; LEAD-FREE SOLDER; C MALE TO C MALE; 75 OHM, RG59B/U COAX
ST CONN. FOR 125 MICRON
|
http://
STMicroelectronics N.V.
意法半导
|
| UPSD3253B-40T1 UPSD3253AV-40T6 UPSD3253AV-40T1 UPS |
Flash Programmable System Devices with 8032 Microcontroller Core and 256Kbit SRAM 闪存可编程系统设备与8032微控制器核心56Kbit的SRAM
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
http://
|
| AT76C510 |
LAN with other wireless LANs (WLAN) and legacy LANs. VNET-B based bridges act as access points (AP) to the WLAN and communicate packets
Ethernet to Wireless Bridge-on-a-Chip
The AT76C510 is a highly integrated WLAN plus Internetworking device based on two ARM7TDMI?RISC processors, a 10/100 Ethernet MAC, USB, integrated 2 x 6K x 32-bit SRAM, 3.3V operation, 128- pin PQFP or TQFP package.
|
ATMEL Corporation
|
| CY7C1483V33-100BGC CY7C1483V33-117BGC CY7C1483V33- |
IC, SDRAM, 64M BIT, 512KX4X32 BIT,3.3V,10NS,100MHZ,TSOP-86
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 7.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 CACHE SRAM, 6.5 ns, PBGA209
2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 STANDARD SRAM, 7.5 ns, PBGA209
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 7.5 ns, PBGA165
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 6.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 2M X 36 STANDARD SRAM, 8.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 8.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 STANDARD SRAM, 5.5 ns, PBGA209
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| STM32L011K3 STM32L011G4 STM32L011K4 |
Access line ultra-low-power 32-bit MCU ARM-based Cortex-M0 , up to 16KB Flash, 2KB SRAM, 512B EEPROM, ADC
|
STMicroelectronics
|
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| STM32L073V8 |
Ultra-low-power 32-bit MCU ARM-based Cortex-M0 , up to 192KB Flash, 20KB SRAM, 6KB EEPROM, LCD, USB, ADC, DACs
|
STMicroelectronics
|
| PJ3100 |
7V; 300mA CMOS LDO with enable. For battery-powered devices, personal communication devices
|
PROMAX-JOHNTON
|
|
