| PART |
Description |
Maker |
| AS219-321 AS219-321LF AS219-32107 |
PHEMT GaAs IC High-Linearity 3 V T/R SP3T Switch 0.1-2.5 GHz
|
Skyworks Solutions Inc.
|
| AS217-000 AS217-00006 |
PHEMT GaAs IC High-Linearity 3 V T/R SPDT Switch 0.1-2.5 GHz
|
Skyworks Solutions Inc.
|
| SPF-2000 |
Low Noise High Linearity pHEMT GaAs FET 0.1 - 12 GHz Operation
|
SIRENZA[SIRENZA MICRODEVICES]
|
| LP750SOT89-2 LP750SOT89-1 LP750SOT89 |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| FPD750SOT89 |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
|
Filtronic Compound Semiconductors
|
| FPD750SOT343CE EB750SOT343-AH EB750SOT343-BA EB750 |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
Filtronic Compound Semiconductors
|
| FPD3000SOT89 |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| FPD6836SOT343 |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| FPD1500SOT89CE FPD1500SOT89 EB1500SOT89E-BG EB1500 |
Si, N-CHANNEL, RF POWER, HEMFET
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
RF MICRO DEVICES INC
Filtronic Compound Semiconductors
|
| HMC490LP5 |
GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER/ 12 - 16 GHz
800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz
|
美国讯泰微波有限公司上海代表
HITTITE[Hittite Microwave Corporation]
|
| MRFG35003M6T1 |
MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT
GALLIUM ARSENIDE PHEMT
|
MOTOROLA[Motorola, Inc]
|
