| PART |
Description |
Maker |
| RTP09050-10 |
This HPA Module is a high gain and Amplifier module for GSM and LTE Repeater use.
|
RFHIC
|
| RTP08050-20 |
This HPA Module is a high gain and Amplifier module for CDMA and LTE Repeater use.
|
RFHIC
|
| RFP-0895-33-27 |
HPA Module
|
RFHIC
|
| TGA2505-EPU |
Ku Band HPA
|
TriQuint Semiconductor
|
| TGA2509 |
Wideband 1 W HPA with AGC
|
TriQuint Semiconductor
|
| TGA4916-15 |
7 Watt Ka-Band HPA
|
TriQuint Semiconductor
|
| LPS22HBTR |
MEMS nano pressure sensor: 260-1260 hPa absolute digital output barometer
|
ST Microelectronics
|
| 1792D-16BT0LP 1792D-4B0LP 1792D-2B2LP 1792D-4BT4LP |
MODULE 16 OUT
MODULE 4 IN 模块4中的
MODULE 4 IN/4 OUT 模块4输入/ 4输出
MODULE 16 IN 模块16
MODULE 2 IN/2 OUT 模块2输入/ 2输出
|
NXP Semiconductors N.V.
Stackpole Electronics, Inc.
|
| HYM72V4045GU-60 HYM72V4045GU-50 HYM64V4045GU-60 HY |
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
4M x 72 Bit ECC DRAM Module unbuffered
4M x 64 Bit DRAM Module unbuffered
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 50 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 3.3 4米64位江户内.3分72位江户记忆体模组
GIGASTATION2 SNAP FITTINGF CONN, IVORY 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
|
Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| MF-MSMD030 MF-MSMD020 MF-MSMD010 MF-MSMD014 MF-MSM |
Ka Band LNA
Q-band Power Amplifier
17 - 43 GHz MPA/Multiplier
Ka-Band Power Amplifier
27 - 31 GHz 2W Balanced Power Amplifier
K Band LNA
Ka Band HPA
PTC Resettable Fuses
|
Bourns Inc.
Bourns Electronic Solutions
|
| HYM324020GL-60 HYM324020GL-50 HYM324020GD-60 HYM32 |
4M x 32 -Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE
4M x 32 Bit DRAM Module (SO-DIMM)
|
Infineon
|
