PART |
Description |
Maker |
RFH35N10 RFH35N08 |
POWER MOS FIELD - EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
|
List of Unclassifed Manufacturers ETC[ETC]
|
IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100V7A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管(N沟道增强型硅门)) From old datasheet system TMOS POWER FET 27 AMPERES TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc. ON Semiconductor
|
RFP10P12 RFM10P15 |
(RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS (RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
|
GE Solid State
|
SSM5P05FU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫 LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
SSM3J14T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch DC-DC Converters
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
MTM40N20 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conduct...
|
MRF8S19140HR3 MRF8S19140HSR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor
|
MRF282 MRF282ZR1 MRF282SR1 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
MTP6N10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|