PART |
Description |
Maker |
AGR19125E AGR19125EF AGR19125EU |
125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
AGR19045EF |
45 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
AGR19090E AGR19090EF AGR19090EU |
90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
MADCSM0001TR MADCSM0001 MADCSM0001SMB |
Dual-Band/Triple-Mode Downconverter 869 - 893 MHz and 1930 - 1990 MHz
|
MACOM[Tyco Electronics]
|
DSW1064-A |
1930 MHz - 1990 MHz RF/MICROWAVE ISOLATOR
|
|
SM1920-52LD |
1930 - 1990 MHz 160 Watt Power Amplifier
|
Stealth Microwave, Inc.
|
1920AB60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor BJT 双极型晶体管
|
GHz Technology Micrel Semiconductor, Inc.
|
1920AB4 |
4 W, 25 V, 1930-1990 MHz common emitter transistor BJT 双极型晶体管
|
GHz Technology LEM
|
PTFA190451E PTFA190451F |
Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 - 1990 MHz
|
Infineon Technologies AG
|
PTFB192503EL PTFB192503FL |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930-1990 MHz
|
Infineon Technologies AG
|
RFP-1500-19-50 RFP-1500-9-50 |
1930 MHz - 1990 MHz 50 ohm RF/MICROWAVE TERMINATION 925 MHz - 960 MHz 50 ohm RF/MICROWAVE TERMINATION
|
Anaren, Inc. ANAREN INC
|
MRF7S19100N |
1930?1990 MHz, 29 W Avg., 28 V Single W?CDMA Lateral N?Channel RF Power MOSFETs From old datasheet system
|
Motorola Semiconductor Products
|