| PART |
Description |
Maker |
| BS616UV2021DC BS616UV2021 BS616UV2021AC BS616UV202 |
10ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable
Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
Hex Buffer/Driver With Open-Drain Outputs 14-TSSOP -40 to 85
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| K6T1008V2C K6T1008V2C-B K6T1008V2C-D K6T1008V2C-F |
128K x8 bit Low Power and Low Voltage CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| BS616LV201606 BS616LV1010ECG70 BS616LV1010DIG55 BS |
Very Low Power CMOS SRAM 128K X 16 bit
|
Brilliance Semiconductor
|
| LY62W12816ML-70LLSIT LY62W12816GL-70LLSI LY62W1281 |
128K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| EM610FV8T |
128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| EM610FV8S |
128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| EM640FR16DW-10L EM640FS16DW-10L EM641FR16DW-10L EM |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
http://
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
|
| K6F2016U4E K6F2016U4E-F DSK6F2016U4E DS_K6F2016U4E |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K6F2016U4D K6F2016U4D-F K6F2016U4D-FF55 K6F2016U4D |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
|
| BS616LV2010 BS616LV2010EC BS616LV2010EI |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
|
| BS616UV2011TI BS616UV2011EI BS616UV2011 BS616UV201 |
Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
|
| MX27C1000PI-70 MX27C1000QI-70 MX27C1000MI-55 MX27C |
Single Output LDO, 3.0A, Fixed(1.8V), Fast Transient Response, Low Quiescent Current 5-TO-220 -40 to 125
Single Output LDO, 3.0A, Fixed(2.5V), Fast Transient Response, Low Quiescent Current 5-TO-220 -40 to 125
FPGA - 200000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN 128K X 8 OTPROM, 90 ns, PDSO32
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 70 ns, PQCC32
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 120 ns, PQCC32
|
Macronix International Co., Ltd.
|
