| PART |
Description |
Maker |
| HMC341LC3B |
SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz
|
Hittite Microwave Corporation
|
| HMC341LC3B09 |
SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz
21000 MHz - 29000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HMC361G8 |
SMT GaAs HBT MMIC
|
Hittite Microwave Corporation
|
| HMC251MS801 |
GaAs MMIC SMT DIVIDE-BY-2, 3.0 - 6.5 GHz
|
Hittite Microwave Corporation
|
| HMC434 |
SMT GaAs HBT MMIC DIVIDE-BY-8, DC - 8.0 GHz
|
HITTITE[Hittite Microwave Corporation]
|
| 220MS8E |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 5 - 12 GHz
|
美国讯泰微波有限公司上海代表
|
| HMC437MS8G HMC437MS8G10 HMC437MS8GE |
SMT GaAs HBT MMIC DIVIDE-BY-3, DC - 7 GHz
|
Hittite Microwave Corporation
|
| 175MS8E |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 1.7 - 4.5 GHz
|
Hittite Microwave Corporation
|
| 363S8GE |
SMT GaAs HBT MMIC DIVIDE-BY-8, DC - 12.0 GHz
|
美国讯泰微波有限公司上海代表
|
| 432E HMC432 HMC43210 HMC432E |
SMT GaAs HBT MMIC DIVIDE-BY-2, DC - 8 GHz
|
Hittite Microwave Corporation
|
| 218MS8E |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 4.5 - 6 GHz
|
美国讯泰微波有限公司上海代表
|
