PART |
Description |
Maker |
AWT6301M9P8 AWT6301 |
CELLULAR DUAL MODE AMPLS/CDMA 3.4V/28 dBm LINEAR POWER AMPLIFIER MODULE 胞双模AMPLS / CDMA.4V/28 dBm线性功率放大器模块 The AWT6301 meets the increasing demands for higher efficiency and linearity in AMPS/CDMA 1X handsets, while reducing pcb area by ...
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ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] Anadigics Inc
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SFH4850E7800 |
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
MAX1959 MAX1958 MAX1958ETP MAX1959ETP |
W-CDMA/N-CDMA Cellular Phone HBT PA Management ICs
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MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products]
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ADAPTENUATORS SM-BM-6 NF-BF-10 NF-BF-3 NF-BF-6 NF- |
50OHM, 3,6,10 dB, DC to 2000 MHz Adaptenuators 0 MHz - 2000 MHz RF/MICROWAVE FIXED ATTENUATOR 50OHM, 3,6,10 dB, DC to 2000 MHz Adaptenuators 50OHM/ 3/6/10 dB/ DC to 2000 MHz Adaptenuators 50OHM / 3 /6 /10 dB / DC to 2000 MHz Adaptenuators
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衰减 MINI[Mini-Circuits]
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MWIC930 |
MWIC930R1, MWIC930GR1 N-CDMA, W-CDMA, GSM/GSM EDGE, 746-960 MHz, 30 W, 26-28 V RF LDMOS Integrated Power Amplifiers
|
Motorola
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MAX1959ETP-T |
W-CDMA/N-CDMA Cellular Phone HBT PA Management ICs TELECOM, CELLULAR, BASEBAND CIRCUIT, QCC20
|
Maxim Integrated Products, Inc.
|
IRF9640 IRF9640PBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-11A) Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A) Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-11A)
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IRF[International Rectifier]
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MA4IQP900L-1291T MA4IQP900L-129V1 |
850 MHz - 960 MHz RF/MICROWAVE AM/PHASE MODEM I/Q Modulator/Demodulator 850-960 MHz
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ETC[ETC] MACOM[Tyco Electronics] List of Unclassifed Manufacturers
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B39212B7959P810 |
SAW Duplexer W-CDMA Band 4 / CDMA 1x AWS Band
|
EPCOS
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IRF9Z14 |
-60V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
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IRF[International Rectifier]
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