PART |
Description |
Maker |
EPC-440-0.9 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-525-0.5-2 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-470-0.5 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-1300-3.0-3 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-1300-0.22-4 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
KOM0622033A |
6-CHIP SILICON PHOTODIODE ARRAY LOW DARK CURRENT
|
SIEMENS AG Siemens Semiconductor Group
|
S8865-256 S8865-256G |
Photodiode array combined with signal processing circuit chip
|
Hamamatsu Corporation
|
MXP22-C |
Multi Element Opto Arrays Monolithic Photodiode Array-Chip
|
MICROSEMI[Microsemi Corporation]
|
C10439-01 C10439-02 C10439-03 |
Photodiode module Integrates a Si photodiode for precision photometry with low-noise amp
|
Hamamatsu Corporation
|
S2684-254 |
Si photodiode Photodiode with interference filter for monochromatic light (254 nm) detection
|
Hamamatsu Corporation
|
S2684-254 |
Si photodiode Photodiode with interference filter for monochromatic light (254 nm) detection
|
Hamamatsu Photonics
|