PART |
Description |
Maker |
EPC-1300-0.5-4 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-660-0.5 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-880-1.4 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-440-1.4 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
KOM0622033A |
6-CHIP SILICON PHOTODIODE ARRAY LOW DARK CURRENT
|
SIEMENS AG Siemens Semiconductor Group
|
S8865-256 S8865-256G |
Photodiode array combined with signal processing circuit chip
|
Hamamatsu Corporation
|
S8865-64 S8865-128 S8865 |
Photodiode array combined with signal processing circuit chip
|
Hamamatsu Corporation
|
S8865-256G |
Photodiode array combined with signal processing circuit chip 光电二极管阵列结合信号处理集成电路芯
|
Hamamatsu Photonics K.K.
|
S8865-64 |
Photodiode array combined with signal processing circuit chip 光电二极管阵列结合信号处理集成电路芯
|
Hamamatsu Photonics K.K.
|
S2592 |
Si photodiode Thermoelectrically cooled photodiode for low-light-level detection in UV to near IR
|
Hamamatsu Photonics
|