| PART |
Description |
Maker |
| PTF191601 PTF191601E |
LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz
LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz
|
INFINEON[Infineon Technologies AG]
|
| PHI920-45 PH1920-45 |
Wireless Bipolar Power Transistor, 45W 1930 - 1990 MHz
WIRELESS BIPOLAR POWER TRASISTOR 45W 1930-1990 MHZ 无线双极功率45930-1990兆赫TRASISTOR
|
Tyco Electronics
OKI SEMICONDUCTOR CO., LTD.
|
| MW5IC2030MBR1 MW5IC2030GMBR1 |
RF LDMOS Wideband Integrated Power Amplifiers 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
1930–1990 MHz, 30 W, 26 V GSM/GSM EDGE, W–CDMA, PHS RF LDMOS Wideband Integrated Power Amplifier
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
|
| AGR19125E AGR19125EF AGR19125EU |
125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| AGR19090E AGR19090EF AGR19090EU |
90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| MAFRIN0540 |
Single Junction Drop-In Circulator 1930 MHz-1990 MHz
|
M/A-COM Technology Solutions, Inc.
|
| 1920CD35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| 1920A05 |
5 W, 26 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| DSW1064-A |
1930 MHz - 1990 MHz RF/MICROWAVE ISOLATOR
|
|
| 1920AB60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor
BJT 双极型晶体管
|
GHz Technology
Micrel Semiconductor, Inc.
|
| MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc
MOTOROLA
|
