PART |
Description |
Maker |
BAV70 Q68000-A6622 |
Silicon Switching Diode Array (For high-speed switchingFor high-speed switching) 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
1N4148WS |
High Speed Switching Diode Fast Switching Speed Automatic Insertion
|
First Components International
|
CMHD4150 |
SURFACE MOUNT HIGH SPEED SWITCHING DIODE 0.25 A, 50 V, SILICON, SIGNAL DIODE SURFACE MOUNT HIGH SPEED SWITCHING DIODE
|
Central Semiconductor, Corp. CENTRAL[Central Semiconductor Corp]
|
1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
1SS397 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
BAS70-07W BAS7007W Q62702-A1186 |
Silicon Schottky Diode (General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
IMN10 |
Switching Diode Ultra high speed switching High reliability.
|
Rohm
|
RM50HG-12S RM50HG-12S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
RM20C1A-XXF RM20DA/CA/C1A-XXF RM20CA-XXF RM20DA-XX |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE Fast Recovery Diode Modules, F Series (for Bipolar speed switching)
|
Mitsubishi Electric Corporation
|
BAW56U |
General Purpose Diodes - Silicon Switching Diode Array for high-speed switching
|
Infineon
|
1SS426 |
Switching diode Ultra-High Speed Switching Applications
|
Toshiba Semiconductor
|