| PART |
Description |
Maker |
| BFP520 Q62702-F1794 Q62702-F1491 |
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 2SC3355 2SC3355-T |
For amplify low noise and high frequency
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
NEC[NEC]
|
| 2SC5472 2SC547 |
Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation) L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| 2SC5473 2SC547 |
Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| 2SC5474 2SC547 |
Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| MMBR941LT3 |
NPN Silicon Low Noise / High-Frequency Transistors
|
Motorola
|
| MRF5811LT1 |
LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON
|
MOTOROLA[Motorola, Inc]
|
| NTE316 |
Silicon NPN Transistor High Gain, Low Noise Amp
|
NTE[NTE Electronics]
|
| 2SC5624 2SC5624VH-TL-E |
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
|
Renesas Electronics Corporation
|
| 2SC5593 |
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
|
Renesas Electronics Corporation
|
| BFR181W Q62702-F1491 |
NPN Silicon RF Transistor )For low noise/ high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
|
| BF1012 Q62702-F1487 Q62702-S535 Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) NPN硅自动对焦和开关晶体管（高击穿电压低集电极发射极饱和电压）
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
