PART |
Description |
Maker |
ML74WLBD |
NOR Gate (unbuffered) and AND Gate (unbuffered)
|
Minilogic Device Corporation Limited
|
ML74WLBE |
NOR Gate (unbuffered) and OR Gate (unbuffered)
|
Minilogic Device Corporation Limited
|
74HCU04DR2G 74HCU04DTR2G |
Hex Unbuffered Inverter; Package: SOIC 14 LEAD; No of Pins: 14; Container: Tape and Reel; Qty per Container: 2500 HC/UH SERIES, HEX 1-INPUT INVERT GATE, PDSO14 Hex Unbuffered Inverter; Package: TSSOP-14; No of Pins: 14; Container: Tape and Reel; Qty per Container: 2500 HC/UH SERIES, HEX 1-INPUT INVERT GATE, PDSO14
|
ON Semiconductor
|
M470L6524DU0-LCC M470L2923DV0-CA2 M470L2923DV0-CB0 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554B |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC 64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC 128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
M366S3354BTS-C7A M374S6553BTS-C7A M374S2953BTS-C7A |
SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
WG14013FR04 WG12013FR02 WG18015R FR35 WG18027R12 W |
1340 A, 1300 V, GATE TURN-OFF SCR 2150 A, 1500 V, SYMMETRICAL GTO SCR 820 A, 4000 V, GATE TURN-OFF SCR 1685 A, 2700 V, GATE TURN-OFF SCR 870 A, 600 V, GATE TURN-OFF SCR 700 A, 600 V, GATE TURN-OFF SCR 730 A, 1000 V, GATE TURN-OFF SCR 890 A, 1000 V, GATE TURN-OFF SCR
|
WESTCODE SEMICONDUCTORS LTD
|
HYMD232646B8-H HYMD232646B8-K HYMD232646B8-L HYMD2 |
Unbuffered DDR SDRAM DIMM 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 32Mx64|2.5V|M/K/H/L|x8|DDR SDRAM - Unbuffered DIMM 256MB 32Mx64 | 2.5V的| /升| x8 | DDR SDRAM内存- 256MB的无缓冲DIMM
|
Hynix Semiconductor http://
|
HYMD232646A8-H HYMD232646A8-K HYMD232646A8-L HYMD2 |
DDR SDRAM - Unbuffered DIMM 256MB 32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184 Unbuffered DDR SDRAM DIMM
|
HYNIX SEMICONDUCTOR INC
|
HYMD264646B8-H HYMD264646B8-K HYMD264646B8-L HYMD2 |
Unbuffered DDR SDRAM DIMM 64Mx64|2.5V|M/K/H/L|x16|DDR SDRAM - Unbuffered DIMM 512MB
|
Hynix Semiconductor
|